Magnetism without magnetic impurities in oxides ZrO2 and TiO2
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چکیده
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Electronic structure, donor and acceptor transitions, and magnetism of 3d impurities in In2O3 and ZnO
3d transition impurities in wide-gap oxides may function as donor/acceptor defects to modify carrier concentrations, and as magnetic elements to induce collective magnetism. Previous first-principles calculations have been crippled by the LDA error, where the occupation of the 3d-induced levels is incorrect due to spurious charge spilling into the misrepresented host conduction band, and have o...
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